FMV06N60ES Todos los transistores

 

FMV06N60ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FMV06N60ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de FMV06N60ES MOSFET

   - Selección ⓘ de transistores por parámetros

 

FMV06N60ES Datasheet (PDF)

 ..1. Size:489K  fuji
fmv06n60es.pdf pdf_icon

FMV06N60ES

FMV06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F (SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.7

 5.1. Size:469K  fuji
fmv06n60e.pdf pdf_icon

FMV06N60ES

FMV06N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 8.1. Size:375K  fuji
fmv06n90e.pdf pdf_icon

FMV06N60ES

http://www.fujisemi.comFMV06N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate t

Otros transistores... FMR23N60E , FMR23N60ES , FMR28N50E , FMR28N50ES , FMV03N60E , FMV05N50E , FMV05N60E , FMV06N60E , IRFB4115 , FMV06N90E , FMV07N50E , FMV08N50E , FMV09N90E , FMV10N60E , FMV10N80E , FMV11N60E , FMV11N90E .

History: HGP068N15S | ELM17408GA

 

 
Back to Top

 


 
.