FMV16N50ES MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMV16N50ES

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO-220F

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FMV16N50ES datasheet

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FMV16N50ES

FMV16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

 5.1. Size:358K  fuji
 fmv16n50e.pdf pdf_icon

FMV16N50ES

FMV16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.

 8.1. Size:519K  fuji
 fmv16n60es.pdf pdf_icon

FMV16N50ES

FMV16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

 8.2. Size:469K  fuji
 fmv16n60e.pdf pdf_icon

FMV16N50ES

FMV16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.

MOSTRAR MÁS

Otros transistores... FMV11N60E, FMV11N90E, FMV12N50E, FMV12N50ES, FMV12N60ES, FMV13N60E, FMV13N60ES, FMV16N50E, IRFP260, FMV16N60E, FMV16N60ES, FMV17N60ES, FMV19N60E, FMV19N60ES, FMV20N50E, FMV20N50ES, FMV20N60S1