FMV16N50ES - Даташиты. Аналоги. Основные параметры
Наименование производителя: FMV16N50ES
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 210 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO-220F
Аналог (замена) для FMV16N50ES
FMV16N50ES Datasheet (PDF)
fmv16n50es.pdf

FMV16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2
fmv16n50e.pdf

FMV16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.
fmv16n60es.pdf

FMV16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2
fmv16n60e.pdf

FMV16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.
Другие MOSFET... FMV11N60E , FMV11N90E , FMV12N50E , FMV12N50ES , FMV12N60ES , FMV13N60E , FMV13N60ES , FMV16N50E , 8205A , FMV16N60E , FMV16N60ES , FMV17N60ES , FMV19N60E , FMV19N60ES , FMV20N50E , FMV20N50ES , FMV20N60S1 .



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