FMV20N50ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FMV20N50ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 95 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.7 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: TO-220F

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FMV20N50ES Datasheet (PDF)

..1. Size:491K fuji
fmv20n50es.pdf

FMV20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

5.1. Size:360K fuji
fmv20n50e.pdf

FMV20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

8.1. Size:448K fuji
fmv20n60s1.pdf

http://www.fujielectric.com/products/semiconductor/FMV20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-220F(SLS)Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)TelecomSource(S)Power condi

8.2. Size:239K inchange semiconductor
fmv20n60s1.pdf

isc N-Channel MOSFET Transistor FMV20N60S1FEATURESLow on-resistance:RDS(on) 0.19 (max)Low switching loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUPS (Uninterruptible Power Supply)Power conditioner systemPower supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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