FMV20N50ES - описание и поиск аналогов

 ..1. Size:491K  fuji
 fmv20n50es.pdf 

FMV20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

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 fmv20n50e.pdf 

FMV20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.

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 fmv20n60s1.pdf 

http //www.fujielectric.com/products/semiconductor/ FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-220F(SLS) Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) Power condi

 8.2. Size:239K  inchange semiconductor
 fmv20n60s1.pdf 

isc N-Channel MOSFET Transistor FMV20N60S1 FEATURES Low on-resistance RDS(on) 0.19 (max) Low switching loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION UPS (Uninterruptible Power Supply) Power conditioner system Power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU