FQA13N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQA13N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 190 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 45 nC
   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 245 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm
   Paquete / Cubierta: TO-3P

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FQA13N50 Datasheet (PDF)

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fqa13n50.pdf

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 13.4A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

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fqa13n50c.pdf

QFETFQA13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored to Fa

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fqa13n50c f109.pdf

December 2013FQA13N50C_F109N-Channel QFET MOSFET500 V, 13.5 A, 480 mDescription FeaturesThese N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.75 Aplanar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC)has been especia

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fqa13n50cf.pdf

July 2007 FRFETFQA13N50CF500V N-Channel MOSFETFeatures Description 15A, 500V, RDS(on) = 0.48 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tailored to

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fqa13n50c-f109.pdf

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patentcoverage may be accessed at www.onsemi.com/s

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