FQA13N50. Аналоги и основные параметры
Наименование производителя: FQA13N50
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 190 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 140 ns
Cossⓘ - Выходная емкость: 245 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.43 Ohm
Тип корпуса: TO-3P
Аналог (замена) для FQA13N50
- подборⓘ MOSFET транзистора по параметрам
FQA13N50 даташит
fqa13n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 13.4A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been
fqa13n50c.pdf
QFET FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.5A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fa
fqa13n50c f109.pdf
December 2013 FQA13N50C_F109 N-Channel QFET MOSFET 500 V, 13.5 A, 480 m Description Features These N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.75 A planar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC) has been especia
fqa13n50cf.pdf
July 2007 FRFET FQA13N50CF 500V N-Channel MOSFET Features Description 15A, 500V, RDS(on) = 0.48 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to
Другие IGBT... FP8V50, FQA10N60C, FQA10N80, FQA10N80C, FQA11N90, FQA11N90C, FQA12N60, FQA12P20, IRFZ24N, FQA13N50C, FQA13N80, FQA14N30, FQA16N25C, FQA16N50, FQA17N40, FQA17P10, FQA19N20L
History: FP5W90HVX2
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Список транзисторов
Обновления
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