FQA28N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA28N50F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 310 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 28.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 110 nC
Tiempo de subida (tr): 290 nS
Conductancia de drenaje-sustrato (Cd): 640 pF
Resistencia entre drenaje y fuente RDS(on): 0.16 Ohm
Paquete / Cubierta: TO-3PN
Búsqueda de reemplazo de MOSFET FQA28N50F
FQA28N50F Datasheet (PDF)
fqa28n50f.pdf
September 2001TMFRFETFQA28N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially
fqa28n50f.pdf
isc N-Channel MOSFET Transistor FQA28N50FFEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
fqa28n50.pdf
August 2014FQA28N50N-Channel QFET MOSFET500 V, 28.4 A, 160 mFeatures Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect14.2 A transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Gate Charge (Typ. 110 nC)This advanced technology has been especially tailored
fqa28n50 f109.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be
fqa28n50.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be
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