All MOSFET. FQA28N50F Datasheet

 

FQA28N50F MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA28N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 28.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 290 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-3PN

 FQA28N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA28N50F Datasheet (PDF)

 ..1. Size:670K  fairchild semi
 fqa28n50f.pdf

FQA28N50F FQA28N50F

September 2001TMFRFETFQA28N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially

 ..2. Size:215K  inchange semiconductor
 fqa28n50f.pdf

FQA28N50F FQA28N50F

isc N-Channel MOSFET Transistor FQA28N50FFEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 6.1. Size:472K  fairchild semi
 fqa28n50.pdf

FQA28N50F FQA28N50F

August 2014FQA28N50N-Channel QFET MOSFET500 V, 28.4 A, 160 mFeatures Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect14.2 A transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Gate Charge (Typ. 110 nC)This advanced technology has been especially tailored

 6.2. Size:778K  fairchild semi
 fqa28n50 f109.pdf

FQA28N50F FQA28N50F

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be

 6.3. Size:753K  onsemi
 fqa28n50.pdf

FQA28N50F FQA28N50F

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF6216 | HUF76445P3

 

 
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