FQA6N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA6N80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 185 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 6.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 31 nC
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 125 pF
Resistencia entre drenaje y fuente RDS(on): 1.95 Ohm
Paquete / Cubierta: TO-3P
Búsqueda de reemplazo de MOSFET FQA6N80
FQA6N80 Datasheet (PDF)
fqa6n80.pdf
September 2000TMQFETFQA6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.3A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailo
fqa6n90.pdf
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fqa6n70.pdf
December 2000TMQFETQFETQFETQFETFQA6N70700V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.4A, 700V, RDS(on) = 1.5 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology is espe
fqa6n90c f109.pdf
September 2007 QFETFQA6N90C_F109900V N-Channel MOSFETFeatures Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 11pF)This advanced technology has been especially tailored t
fqa6n90c-f109.pdf
FQA6N90C-F109 N-Channel QFET MOSFETDescription900 V, 6 A, 2.3 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 Astripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3
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