FQA6N80 Specs and Replacement
Type Designator: FQA6N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 185 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm
Package: TO-3P
FQA6N80 substitution
- MOSFET ⓘ Cross-Reference Search
FQA6N80 datasheet
fqa6n80.pdf
September 2000 TM QFET FQA6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailo... See More ⇒
fqa6n90.pdf
April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es... See More ⇒
fqa6n70.pdf
December 2000 TM QFET QFET QFET QFET FQA6N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.4A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology is espe... See More ⇒
fqa6n90c f109.pdf
September 2007 QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 11pF) This advanced technology has been especially tailored t... See More ⇒
Detailed specifications: FQA44N10, FQA46N15F109, FQA47P06, FQA48N20, FQA55N10, FQA5N90, FQA65N06, FQA6N70, IRF540N, FQA6N90, FQA7N60, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M, FQA85N06, FQA8N90C
Keywords - FQA6N80 MOSFET specs
FQA6N80 cross reference
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