FQA7N80C Todos los transistores

 ..1. Size:609K  fairchild semi
 fqa7n80c.pdf

TM QFET FQA7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast

 ..2. Size:798K  fairchild semi
 fqa7n80c f109.pdf

September 2007 QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 10pF) This advanced technology has been especially tailored

 0.1. Size:1580K  onsemi
 fqa7n80c-f109.pdf

FQA7N80C-F109 N-Channel QFET MOSFET Description 800 V, 7 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 27nC) technology has been especially tailored to reduce o

 7.1. Size:732K  fairchild semi
 fqa7n80.pdf

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.2A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been es

 9.1. Size:581K  fairchild semi
 fqa7n60.pdf

April 2000 TM QFET QFET QFET QFET FQA7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.7A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been esp

 9.2. Size:674K  fairchild semi
 fqa7n90.pdf

March 2001 TM QFET FQA7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 900V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored

 9.3. Size:677K  fairchild semi
 fqa7n90m.pdf

January 2002 TM QFET FQA7N90M 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 900V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored