FQA7N80C
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQA7N80C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 198
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 27
nC
trⓘ -
Время нарастания: 100
ns
Cossⓘ - Выходная емкость: 120
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.9
Ohm
Тип корпуса:
TO-3P
Аналог (замена) для FQA7N80C
FQA7N80C
Datasheet (PDF)
..1. Size:609K fairchild semi
fqa7n80c.pdf 
TMQFETFQA7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast
..2. Size:798K fairchild semi
fqa7n80c f109.pdf 
September 2007 QFETFQA7N80C_F109800V N-Channel MOSFETFeatures Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 10pF)This advanced technology has been especially tailored
0.1. Size:1580K onsemi
fqa7n80c-f109.pdf 
FQA7N80C-F109 N-Channel QFET MOSFETDescription800 V, 7 A, 1.9 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 27nC)technology has been especially tailored to reduce o
7.1. Size:732K fairchild semi
fqa7n80.pdf 
April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been es
9.1. Size:581K fairchild semi
fqa7n60.pdf 
April 2000TMQFETQFETQFETQFETFQA7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.7A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp
9.2. Size:674K fairchild semi
fqa7n90.pdf 
March 2001TMQFETFQA7N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 900V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored
9.3. Size:677K fairchild semi
fqa7n90m.pdf 
January 2002TMQFETFQA7N90M900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 900V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored
Другие MOSFET... IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
