FQA90N10V2 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQA90N10V2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA90N10V2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 330 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 105 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 492 nS

Cossⓘ - Capacitancia de salida: 1180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO-3P

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FQA90N10V2 datasheet

..1. Size:1007K fairchild semi
fqa90n10v2.pdf pdf_icon

October 2005 QFET FQA90N10V2 100V N-Channel MOSFET Features Description 105A, 100V, RDS(on) = 10m @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 147 nC) DMOS technology. Low Crss ( typical 300 pF) This advanced technology has been especially tailore

7.1. Size:1091K fairchild semi
fqa90n15 fqh90n15.pdf pdf_icon

October 2006 QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge (typical 220 nC) stripe, DMOS technology. Low Crss (typical 200 pF) This advanced technology has been especiall

7.2. Size:784K fairchild semi
fqa90n15 f109.pdf pdf_icon

November 2007 QFET FQA90N15_F109 150V N-Channel MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 200pF) This advanced technology has been especially tailore

7.3. Size:1004K onsemi
fqa90n15-f109.pdf pdf_icon

FQA90N15-F109 N-Channel QFET MOSFET Description 150 V, 90 A, 18 m These N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 A This advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC) minimize on-

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FQA90N10V2 Todos los transistores