FQA90N10V2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA90N10V2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 330 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 105 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 147 nC
Tiempo de subida (tr): 492 nS
Conductancia de drenaje-sustrato (Cd): 1180 pF
Resistencia entre drenaje y fuente RDS(on): 0.01 Ohm
Paquete / Cubierta: TO-3P
Búsqueda de reemplazo de MOSFET FQA90N10V2
FQA90N10V2 Datasheet (PDF)
fqa90n10v2.pdf
October 2005QFETFQA90N10V2100V N-Channel MOSFETFeatures Description 105A, 100V, RDS(on) = 10m @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 147 nC)DMOS technology. Low Crss ( typical 300 pF)This advanced technology has been especially tailore
fqa90n15 fqh90n15.pdf
October 2006 QFETFQH90N15 / FQA90N15 N-Channel Power MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge (typical 220 nC)stripe, DMOS technology. Low Crss (typical 200 pF)This advanced technology has been especiall
fqa90n15 f109.pdf
November 2007 QFETFQA90N15_F109150V N-Channel MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 200pF)This advanced technology has been especially tailore
fqa90n15-f109.pdf
FQA90N15-F109 N-Channel QFET MOSFETDescription150 V, 90 A, 18 mThese N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 AThis advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC)minimize on-
fqa90n15.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
