FQA90N10V2 Specs and Replacement

Type Designator: FQA90N10V2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 492 nS

Cossⓘ - Output Capacitance: 1180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-3P

FQA90N10V2 substitution

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FQA90N10V2 datasheet

 ..1. Size:1007K  fairchild semi
 fqa90n10v2.pdf pdf_icon

FQA90N10V2

October 2005 QFET FQA90N10V2 100V N-Channel MOSFET Features Description 105A, 100V, RDS(on) = 10m @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 147 nC) DMOS technology. Low Crss ( typical 300 pF) This advanced technology has been especially tailore... See More ⇒

 7.1. Size:1091K  fairchild semi
 fqa90n15 fqh90n15.pdf pdf_icon

FQA90N10V2

October 2006 QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge (typical 220 nC) stripe, DMOS technology. Low Crss (typical 200 pF) This advanced technology has been especiall... See More ⇒

 7.2. Size:784K  fairchild semi
 fqa90n15 f109.pdf pdf_icon

FQA90N10V2

November 2007 QFET FQA90N15_F109 150V N-Channel MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 200pF) This advanced technology has been especially tailore... See More ⇒

 7.3. Size:1004K  onsemi
 fqa90n15-f109.pdf pdf_icon

FQA90N10V2

FQA90N15-F109 N-Channel QFET MOSFET Description 150 V, 90 A, 18 m These N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 A This advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC) minimize on-... See More ⇒

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Detailed specifications: FQA6N90, FQA7N60, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M, FQA85N06, FQA8N90C, IRF640N, FQA9N50, FQA9N90C, FQAF10N80, FQAF11N40, FQAF11N90, FQAF12N60, FQAF12P20, FQAF14N30

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