FQAF10N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQAF10N80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 113 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 6.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 115 nS
Cossⓘ - Capacitancia de salida: 215 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.05 Ohm
Encapsulados: TO-3PF
Búsqueda de reemplazo de FQAF10N80 MOSFET
- Selecciónⓘ de transistores por parámetros
FQAF10N80 datasheet
..1. Size:700K fairchild semi
fqaf10n80.pdf 
TM QFET FQAF10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fa
9.1. Size:633K fairchild semi
fqaf11n90c.pdf
QFET FQAF11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 900V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fa
9.2. Size:525K fairchild semi
fqaf19n60.pdf
April 2000 TM QFET QFET QFET QFET FQAF19N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 600V, RDS(on) = 0.38 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has be
9.3. Size:695K fairchild semi
fqaf11n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 8.8A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has bee
9.4. Size:743K fairchild semi
fqaf15n70.pdf
April 2000 TM QFET QFET QFET QFET 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 700V, RDS(on) = 0.56 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has b
9.5. Size:537K fairchild semi
fqaf12n60.pdf
April 2000 TM QFET QFET QFET QFET FQAF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been
9.6. Size:716K fairchild semi
fqaf13n80.pdf
March 2001 TM QFET FQAF13N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0A, 800V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 68 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailore
9.8. Size:707K fairchild semi
fqaf14n30.pdf
April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.4A, 300V, RDS(on) = 0.29 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has bee
9.9. Size:854K fairchild semi
fqaf16n25c.pdf
QFET FQAF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.4A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to
9.10. Size:662K fairchild semi
fqaf11n90.pdf
September 2000 TM QFET QFET QFET QFET FQAF11N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.2A, 900V, RDS(on) = 0.96 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has
9.11. Size:719K fairchild semi
fqaf16n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.3A, 500V, RDS(on) = 0.32 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has be
9.12. Size:712K fairchild semi
fqaf19n20l.pdf
May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has
9.13. Size:710K fairchild semi
fqaf16n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 12.4A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been
9.14. Size:702K fairchild semi
fqaf17n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 12.2A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has be
9.15. Size:688K fairchild semi
fqaf19n20.pdf
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 15A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been
9.16. Size:615K fairchild semi
fqaf12p20.pdf
May 2000 TM QFET QFET QFET QFET FQAF12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee
9.17. Size:993K onsemi
fqaf16n50.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FQA7N80C, FQA7N90, FQA7N90M, FQA85N06, FQA8N90C, FQA90N10V2, FQA9N50, FQA9N90C, IRFB4227, FQAF11N40, FQAF11N90, FQAF12N60, FQAF12P20, FQAF14N30, FQAF15N70, FQAF16N25, FQAF16N25C
