FQAF10N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQAF10N80
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 113 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 6.7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 55 nC
Время нарастания (tr): 115 ns
Выходная емкость (Cd): 215 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.05 Ohm
Тип корпуса: TO-3PF
FQAF10N80 Datasheet (PDF)
fqaf10n80.pdf
TMQFETFQAF10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to Fa
fqaf11n90c.pdf
QFETFQAF11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fa
fqaf19n60.pdf
April 2000TMQFETQFETQFETQFETFQAF19N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 600V, RDS(on) = 0.38 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has be
fqaf11n40.pdf
April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has bee
fqaf15n70.pdf
April 2000TMQFETQFETQFETQFET 700V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 700V, RDS(on) = 0.56 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has b
fqaf12n60.pdf
April 2000TMQFETQFETQFETQFETFQAF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been
fqaf13n80.pdf
March 2001TMQFETFQAF13N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 800V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 68 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailore
fqaf17p10.pdf
TMQFETFQAF17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12.4A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to
fqaf14n30.pdf
April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 300V, RDS(on) = 0.29 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has bee
fqaf16n25c.pdf
QFETFQAF16N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 250V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 68 pF)This advanced technology has been especially tailored to
fqaf11n90.pdf
September 2000TMQFETQFETQFETQFETFQAF11N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 900V, RDS(on) = 0.96 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 72 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has
fqaf16n50.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.3A, 500V, RDS(on) = 0.32 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has be
fqaf19n20l.pdf
May 2000TMQFETQFETQFETQFET 200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has
fqaf16n25.pdf
May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 12.4A, 250V, RDS(on) = 0.23 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been
fqaf17n40.pdf
April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 12.2A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has be
fqaf19n20.pdf
April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 15A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been
fqaf12p20.pdf
May 2000TMQFETQFETQFETQFETFQAF12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee
fqaf16n50.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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Список транзисторов
Обновления
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