FQAF33N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQAF33N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 25.8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 195 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Encapsulados: TO-3PF
Búsqueda de reemplazo de FQAF33N10 MOSFET
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FQAF33N10 datasheet
fqaf33n10.pdf
April 2000 TM QFET QFET QFET QFET FQAF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has bee
fqaf33n10l.pdf
September 2000 TM QFET QFET QFET QFET FQAF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technol
fqaf34n25.pdf
October 2001 FQAF34N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21.7A, 250V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fas
Otros transistores... FQAF16N25C, FQAF17N40, FQAF17P10, FQAF19N20, FQAF19N20L, FQAF19N60, FQAF22P10, FQAF28N15, IRF9540N, FQAF33N10L, FQAF34N25, FQAF40N25, FQAF44N08, FQAF44N10, FQAF47P06, FQAF58N08, FQAF5N90
History: FQA11N90 | FQU30N06LTU
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