FQAF33N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQAF33N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 25.8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 195 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: TO-3PF
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FQAF33N10 Datasheet (PDF)
fqaf33n10.pdf

April 2000TMQFETQFETQFETQFETFQAF33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has bee
fqaf33n10l.pdf

September 2000TMQFETQFETQFETQFETFQAF33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technol
fqaf34n25.pdf

October 2001FQAF34N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.7A, 250V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fas
Otros transistores... FQAF16N25C , FQAF17N40 , FQAF17P10 , FQAF19N20 , FQAF19N20L , FQAF19N60 , FQAF22P10 , FQAF28N15 , IRF1010E , FQAF33N10L , FQAF34N25 , FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 , FQAF5N90 .
History: STL220N3LLH7 | RUM002N02T2L | SI2335DS-T1 | IPU78CN10N | BLM4953A | STP9NK60Z | IPP180N10N3G
History: STL220N3LLH7 | RUM002N02T2L | SI2335DS-T1 | IPU78CN10N | BLM4953A | STP9NK60Z | IPP180N10N3G



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