FQAF33N10 Specs and Replacement
Type Designator: FQAF33N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 25.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 195 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: TO-3PF
FQAF33N10 substitution
- MOSFET ⓘ Cross-Reference Search
FQAF33N10 datasheet
fqaf33n10.pdf
April 2000 TM QFET QFET QFET QFET FQAF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has bee... See More ⇒
fqaf33n10l.pdf
September 2000 TM QFET QFET QFET QFET FQAF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technol... See More ⇒
fqaf34n25.pdf
October 2001 FQAF34N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21.7A, 250V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fas... See More ⇒
Detailed specifications: FQAF16N25C, FQAF17N40, FQAF17P10, FQAF19N20, FQAF19N20L, FQAF19N60, FQAF22P10, FQAF28N15, IRF9540N, FQAF33N10L, FQAF34N25, FQAF40N25, FQAF44N08, FQAF44N10, FQAF47P06, FQAF58N08, FQAF5N90
Keywords - FQAF33N10 MOSFET specs
FQAF33N10 cross reference
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