FQAF34N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQAF34N25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 21.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 60 nC
trⓘ - Tiempo de subida: 335 nS
Cossⓘ - Capacitancia de salida: 465 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: TO-3PF
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FQAF34N25 Datasheet (PDF)
fqaf34n25.pdf
October 2001FQAF34N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.7A, 250V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fas
fqaf33n10l.pdf
September 2000TMQFETQFETQFETQFETFQAF33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technol
fqaf33n10.pdf
April 2000TMQFETQFETQFETQFETFQAF33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has bee
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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Recientemente añadidas las descripciónes de los transistores:
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