FQAF34N25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQAF34N25

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 21.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 335 nS

Cossⓘ - Capacitancia de salida: 465 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: TO-3PF

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FQAF34N25 datasheet

 ..1. Size:687K  fairchild semi
 fqaf34n25.pdf pdf_icon

FQAF34N25

October 2001 FQAF34N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21.7A, 250V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fas

 9.1. Size:646K  fairchild semi
 fqaf33n10l.pdf pdf_icon

FQAF34N25

September 2000 TM QFET QFET QFET QFET FQAF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technol

 9.2. Size:569K  fairchild semi
 fqaf33n10.pdf pdf_icon

FQAF34N25

April 2000 TM QFET QFET QFET QFET FQAF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has bee

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