All MOSFET. FQAF34N25 Datasheet

 

FQAF34N25 Datasheet and Replacement


   Type Designator: FQAF34N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 335 nS
   Cossⓘ - Output Capacitance: 465 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-3PF
 

 FQAF34N25 substitution

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FQAF34N25 Datasheet (PDF)

 ..1. Size:687K  fairchild semi
 fqaf34n25.pdf pdf_icon

FQAF34N25

October 2001FQAF34N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.7A, 250V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fas

 9.1. Size:646K  fairchild semi
 fqaf33n10l.pdf pdf_icon

FQAF34N25

September 2000TMQFETQFETQFETQFETFQAF33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technol

 9.2. Size:569K  fairchild semi
 fqaf33n10.pdf pdf_icon

FQAF34N25

April 2000TMQFETQFETQFETQFETFQAF33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has bee

Datasheet: FQAF17P10 , FQAF19N20 , FQAF19N20L , FQAF19N60 , FQAF22P10 , FQAF28N15 , FQAF33N10 , FQAF33N10L , 5N60 , FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 , FQAF5N90 , FQAF65N06 , FQAF6N80 .

History: WMQ023N03LG2 | SRT20N090HS2

Keywords - FQAF34N25 MOSFET datasheet

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