FQAF44N10 Todos los transistores

 

FQAF44N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQAF44N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 425 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
   Paquete / Cubierta: TO-3PF
 

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FQAF44N10 Datasheet (PDF)

 ..1. Size:574K  fairchild semi
 fqaf44n10.pdf pdf_icon

FQAF44N10

December 2000TMQFETQFETQFETQFETFQAF44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is esp

 7.1. Size:662K  fairchild semi
 fqaf44n08.pdf pdf_icon

FQAF44N10

August 2000TMQFETQFETQFETQFETFQAF44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35.6A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been

 9.1. Size:774K  fairchild semi
 fqaf40n25.pdf pdf_icon

FQAF44N10

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 250V, RDS(on) = 0.07 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been e

 9.2. Size:708K  fairchild semi
 fqaf47p06.pdf pdf_icon

FQAF44N10

May 2001TMQFETFQAF47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -38A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailore

MOSTRAR MÁS

Otros transistores... FQAF19N60 , FQAF22P10 , FQAF28N15 , FQAF33N10 , FQAF33N10L , FQAF34N25 , FQAF40N25 , FQAF44N08 , 8205A , FQAF47P06 , FQAF58N08 , FQAF5N90 , FQAF65N06 , FQAF6N80 , FQAF6N90 , FQAF70N15 , FQAF7N80 .

History: HFD6N70U | DH065N04E

 

 
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