FQAF44N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQAF44N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 425 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm

Encapsulados: TO-3PF

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FQAF44N10 datasheet

 ..1. Size:574K  fairchild semi
 fqaf44n10.pdf pdf_icon

FQAF44N10

December 2000 TM QFET QFET QFET QFET FQAF44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is esp

 7.1. Size:662K  fairchild semi
 fqaf44n08.pdf pdf_icon

FQAF44N10

August 2000 TM QFET QFET QFET QFET FQAF44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35.6A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been

 9.1. Size:774K  fairchild semi
 fqaf40n25.pdf pdf_icon

FQAF44N10

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 250V, RDS(on) = 0.07 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been e

 9.2. Size:708K  fairchild semi
 fqaf47p06.pdf pdf_icon

FQAF44N10

May 2001 TM QFET FQAF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -38A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailore

MOSTRAR MÁS

Otros transistores... FQAF19N60, FQAF22P10, FQAF28N15, FQAF33N10, FQAF33N10L, FQAF34N25, FQAF40N25, FQAF44N08, IRFP260, FQAF47P06, FQAF58N08, FQAF5N90, FQAF65N06, FQAF6N80, FQAF6N90, FQAF70N15, FQAF7N80