FQAF44N10 Specs and Replacement

Type Designator: FQAF44N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 425 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO-3PF

FQAF44N10 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQAF44N10 datasheet

 ..1. Size:574K  fairchild semi
 fqaf44n10.pdf pdf_icon

FQAF44N10

December 2000 TM QFET QFET QFET QFET FQAF44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is esp... See More ⇒

 7.1. Size:662K  fairchild semi
 fqaf44n08.pdf pdf_icon

FQAF44N10

August 2000 TM QFET QFET QFET QFET FQAF44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35.6A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been... See More ⇒

 9.1. Size:774K  fairchild semi
 fqaf40n25.pdf pdf_icon

FQAF44N10

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 250V, RDS(on) = 0.07 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been e... See More ⇒

 9.2. Size:708K  fairchild semi
 fqaf47p06.pdf pdf_icon

FQAF44N10

May 2001 TM QFET FQAF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -38A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailore... See More ⇒

SHOW MORE

Detailed specifications: FQAF19N60, FQAF22P10, FQAF28N15, FQAF33N10, FQAF33N10L, FQAF34N25, FQAF40N25, FQAF44N08, IRFP260, FQAF47P06, FQAF58N08, FQAF5N90, FQAF65N06, FQAF6N80, FQAF6N90, FQAF70N15, FQAF7N80

Keywords - FQAF44N10 MOSFET specs

 FQAF44N10 cross reference

 FQAF44N10 equivalent finder

 FQAF44N10 pdf lookup

 FQAF44N10 substitution

 FQAF44N10 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility