FQAF47P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQAF47P06

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 450 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO-3PF

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FQAF47P06 datasheet

 ..1. Size:708K  fairchild semi
 fqaf47p06.pdf pdf_icon

FQAF47P06

May 2001 TM QFET FQAF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -38A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailore

 9.1. Size:774K  fairchild semi
 fqaf40n25.pdf pdf_icon

FQAF47P06

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 250V, RDS(on) = 0.07 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been e

 9.2. Size:662K  fairchild semi
 fqaf44n08.pdf pdf_icon

FQAF47P06

August 2000 TM QFET QFET QFET QFET FQAF44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35.6A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been

 9.3. Size:574K  fairchild semi
 fqaf44n10.pdf pdf_icon

FQAF47P06

December 2000 TM QFET QFET QFET QFET FQAF44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is esp

MOSTRAR MÁS

Otros transistores... FQAF22P10, FQAF28N15, FQAF33N10, FQAF33N10L, FQAF34N25, FQAF40N25, FQAF44N08, FQAF44N10, 4435, FQAF58N08, FQAF5N90, FQAF65N06, FQAF6N80, FQAF6N90, FQAF70N15, FQAF7N80, FQAF7N90