All MOSFET. FQAF47P06 Datasheet

 

FQAF47P06 Datasheet and Replacement


   Type Designator: FQAF47P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO-3PF
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FQAF47P06 Datasheet (PDF)

 ..1. Size:708K  fairchild semi
 fqaf47p06.pdf pdf_icon

FQAF47P06

May 2001TMQFETFQAF47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -38A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailore

 9.1. Size:774K  fairchild semi
 fqaf40n25.pdf pdf_icon

FQAF47P06

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 250V, RDS(on) = 0.07 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been e

 9.2. Size:662K  fairchild semi
 fqaf44n08.pdf pdf_icon

FQAF47P06

August 2000TMQFETQFETQFETQFETFQAF44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35.6A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been

 9.3. Size:574K  fairchild semi
 fqaf44n10.pdf pdf_icon

FQAF47P06

December 2000TMQFETQFETQFETQFETFQAF44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is esp

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APT5030AN | HM3018JR | QM6008P

Keywords - FQAF47P06 MOSFET datasheet

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