FQAF6N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQAF6N90
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
Paquete / Cubierta: TO-3PF
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FQAF6N90 Datasheet (PDF)
fqaf6n90.pdf
April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es
fqaf6n80.pdf
September 2000TMQFETFQAF6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tail
fqaf65n06.pdf
May 2001TMQFETFQAF65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 49A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored t
Otros transistores... FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 , FQAF5N90 , FQAF65N06 , FQAF6N80 , AON7410 , FQAF70N15 , FQAF7N80 , FQAF7N90 , FQAF8N80 , FQAF90N08 , FQAF9N50 , FQAF9P25 , FQB10N20C .
History: SFI9510 | RFP3055LE | FQAF6N80
History: SFI9510 | RFP3055LE | FQAF6N80
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