All MOSFET. FQAF6N90 Datasheet

 

FQAF6N90 Datasheet and Replacement


   Type Designator: FQAF6N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-3PF
 

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FQAF6N90 Datasheet (PDF)

 ..1. Size:723K  fairchild semi
 fqaf6n90.pdf pdf_icon

FQAF6N90

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

 8.1. Size:659K  fairchild semi
 fqaf6n80.pdf pdf_icon

FQAF6N90

September 2000TMQFETFQAF6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tail

 9.1. Size:652K  fairchild semi
 fqaf65n06.pdf pdf_icon

FQAF6N90

May 2001TMQFETFQAF65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 49A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored t

Datasheet: FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 , FQAF5N90 , FQAF65N06 , FQAF6N80 , RFP50N06 , FQAF70N15 , FQAF7N80 , FQAF7N90 , FQAF8N80 , FQAF90N08 , FQAF9N50 , FQAF9P25 , FQB10N20C .

History: CS11N90V | TK60P03M1 | NDP4050 | AUIRLR024Z

Keywords - FQAF6N90 MOSFET datasheet

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