FQAF70N15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQAF70N15
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 420 nS
Cossⓘ - Capacitancia de salida: 840 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: TO-3PF
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FQAF70N15 Datasheet (PDF)
fqaf70n15.pdf

April 2000TMQFETQFETQFETQFET N-ChanneI Power MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 44A, 150 V, RDS(on) = 0.028 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 135 nC)planar stripe, DMOS technology. Low Crss ( typical 135 nC)This advanced technology ha
fqaf7n90.pdf

March 2001TMQFETFQAF7N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.2A, 900V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored
fqaf7n80.pdf

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been esp
Otros transistores... FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 , FQAF5N90 , FQAF65N06 , FQAF6N80 , FQAF6N90 , IRF1010E , FQAF7N80 , FQAF7N90 , FQAF8N80 , FQAF90N08 , FQAF9N50 , FQAF9P25 , FQB10N20C , FQB10N20LTM .
History: CHM6336JGP | IPD50R399CP
History: CHM6336JGP | IPD50R399CP



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