FQAF70N15 MOSFET: N-Ch, 150V, 44A. Full datasheet with pinout, specifications and replacement transistor list

FQAF70N15 Datasheet (PDF)

..1. Size:729K fairchild semi
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April 2000TMQFETQFETQFETQFET N-ChanneI Power MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 44A, 150 V, RDS(on) = 0.028 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 135 nC)planar stripe, DMOS technology. Low Crss ( typical 135 nC)This advanced technology ha

9.1. Size:681K fairchild semi
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March 2001TMQFETFQAF7N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.2A, 900V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored

9.2. Size:766K fairchild semi
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April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been esp

Datasheet: FQAF44N08 , FQAF44N10 , FQAF47P06 , FQAF58N08 , FQAF5N90 , FQAF65N06 , FQAF6N80 , FQAF6N90 , 12N60 , FQAF7N80 , FQAF7N90 , FQAF8N80 , FQAF90N08 , FQAF9N50 , FQAF9P25 , FQB10N20C , FQB10N20LTM .