FQAF7N90 Todos los transistores

 

FQAF7N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQAF7N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 45 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.55 Ohm
   Paquete / Cubierta: TO-3PF

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FQAF7N90 Datasheet (PDF)

 ..1. Size:681K  fairchild semi
fqaf7n90.pdf

FQAF7N90
FQAF7N90

March 2001TMQFETFQAF7N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.2A, 900V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored

 8.1. Size:766K  fairchild semi
fqaf7n80.pdf

FQAF7N90
FQAF7N90

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been esp

 9.1. Size:729K  fairchild semi
fqaf70n15.pdf

FQAF7N90
FQAF7N90

April 2000TMQFETQFETQFETQFET N-ChanneI Power MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 44A, 150 V, RDS(on) = 0.028 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 135 nC)planar stripe, DMOS technology. Low Crss ( typical 135 nC)This advanced technology ha

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