FQB11N40TM Todos los transistores

 

FQB11N40TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB11N40TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 147 W
   Voltaje máximo drenador - fuente |Vds|: 400 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 11.4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 27 nC
   Tiempo de subida (tr): 100 nS
   Conductancia de drenaje-sustrato (Cd): 180 pF
   Resistencia entre drenaje y fuente RDS(on): 0.48 Ohm
   Paquete / Cubierta: D2-PAK

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FQB11N40TM Datasheet (PDF)

 ..1. Size:565K  fairchild semi
fqb11n40tm fqi11n40tu.pdf

FQB11N40TM
FQB11N40TM

November 2001FQB11N40 / FQI11N40400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tai

 6.1. Size:970K  fairchild semi
fqb11n40ctm.pdf

FQB11N40TM
FQB11N40TM

October 2008QFETFQB11N40C/FQI11N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especia

 6.2. Size:972K  fairchild semi
fqb11n40c.pdf

FQB11N40TM
FQB11N40TM

November 2013FQB11N40CN-Channel QFET MOSFET400 V, 10.5 A, 530 m Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 5.25 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tai

 6.3. Size:1039K  onsemi
fqb11n40c.pdf

FQB11N40TM
FQB11N40TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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