FQB11N40TM Todos los transistores

 ..1. Size:565K  fairchild semi
 fqb11n40tm fqi11n40tu.pdf

November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tai

 6.1. Size:970K  fairchild semi
 fqb11n40ctm.pdf

October 2008 QFET FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especia

 6.2. Size:972K  fairchild semi
 fqb11n40c.pdf

November 2013 FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 m Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 5.25 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tai

 6.3. Size:1039K  onsemi
 fqb11n40c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur