FQB11N40TM Specs and Replacement
Type Designator: FQB11N40TM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: D2-PAK
FQB11N40TM substitution
- MOSFET ⓘ Cross-Reference Search
FQB11N40TM datasheet
fqb11n40tm fqi11n40tu.pdf
November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tai... See More ⇒
fqb11n40ctm.pdf
October 2008 QFET FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especia... See More ⇒
fqb11n40c.pdf
November 2013 FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 m Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 5.25 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tai... See More ⇒
fqb11n40c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQAF8N80, FQAF90N08, FQAF9N50, FQAF9P25, FQB10N20C, FQB10N20LTM, FQB10N60CTM, FQB11N40CTM, TK10A60D, FQB11P06TM, FQB12N50TMAM002, FQB12N60CTM, FQB12N60TMAM002, FQB12P10TM, FQB12P20TM, FQB13N06LTM, FQB13N06TM
Keywords - FQB11N40TM MOSFET specs
FQB11N40TM cross reference
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FQB11N40TM substitution
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FQAF28N15
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