FQB11N40TM Datasheet and Replacement. Cross Reference Search

FQB11N40TM Datasheet (PDF)

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November 2001FQB11N40 / FQI11N40400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tai

6.1. Size:970K fairchild semi
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October 2008QFETFQB11N40C/FQI11N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especia

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November 2013FQB11N40CN-Channel QFET MOSFET400 V, 10.5 A, 530 m Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 5.25 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tai

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQAF8N80 , FQAF90N08 , FQAF9N50 , FQAF9P25 , FQB10N20C , FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , IRFZ24N , FQB11P06TM , FQB12N50TMAM002 , FQB12N60CTM , FQB12N60TMAM002 , FQB12P10TM , FQB12P20TM , FQB13N06LTM , FQB13N06TM .