FQB12N60CTM Todos los transistores

 ..1. Size:821K  fairchild semi
 fqb12n60ctm fqi12n60ctu.pdf

September 2007 QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially

 6.1. Size:540K  fairchild semi
 fqb12n60tm am002 fqi12n60tu.pdf

April 2000 TM QFET QFET QFET QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo

 8.1. Size:616K  fairchild semi
 fqb12n50tm am002 fqi12n50tu.pdf

TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 39 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

 9.1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe

 9.2. Size:634K  fairchild semi
 fqb12p10tm.pdf

TM QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailo

 9.3. Size:979K  fairchild semi
 fqb12p20tm.pdf

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe

 9.4. Size:309K  onsemi
 fqb12p20.pdf

MOSFET P-Channel, QFET) -200 V, -11.5 A, 470 mW FQB12P20 General Description These P-Channel enhancement mode power field effect transistors www.onsemi.com are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize VDSS RDS(ON) MAX ID MAX on-state resistance, provide superior switching perf