FQB12N60CTM MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB12N60CTM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 182 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: D2-PAK
FQB12N60CTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB12N60CTM Datasheet (PDF)
fqb12n60ctm fqi12n60ctu.pdf
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fqb12n60tm am002 fqi12n60tu.pdf
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fqb12p20tm.pdf
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fqb12p20.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK3498
History: 2SK3498
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