FQB12P20TM Todos los transistores

 

FQB12P20TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB12P20TM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 120 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 11.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 31 nC
   Tiempo de subida (tr): 195 nS
   Conductancia de drenaje-sustrato (Cd): 190 pF
   Resistencia entre drenaje y fuente RDS(on): 0.47 Ohm
   Paquete / Cubierta: D2-PAK

 Búsqueda de reemplazo de MOSFET FQB12P20TM

 

FQB12P20TM Datasheet (PDF)

 ..1. Size:979K  fairchild semi
fqb12p20tm.pdf

FQB12P20TM
FQB12P20TM

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

 6.1. Size:1014K  fairchild semi
fqb12p20 fqi12p20.pdf

FQB12P20TM
FQB12P20TM

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

 6.2. Size:309K  onsemi
fqb12p20.pdf

FQB12P20TM
FQB12P20TM

MOSFET P-Channel, QFET)-200 V, -11.5 A, 470 mWFQB12P20General DescriptionThese P-Channel enhancement mode power field effect transistorswww.onsemi.comare produced using ON Semiconductors proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeVDSS RDS(ON) MAX ID MAXon-state resistance, provide superior switching perf

 8.1. Size:634K  fairchild semi
fqb12p10tm.pdf

FQB12P20TM
FQB12P20TM

TMQFETFQB12P10 / FQI12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailo

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


FQB12P20TM
  FQB12P20TM
  FQB12P20TM
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C

 

 

 
Back to Top