FQB12P20TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB12P20TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 195 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm

Encapsulados: D2-PAK

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FQB12P20TM datasheet

 ..1. Size:979K  fairchild semi
 fqb12p20tm.pdf pdf_icon

FQB12P20TM

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe

 6.1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf pdf_icon

FQB12P20TM

October 2008 QFET FQB12P20 / FQI12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espe

 6.2. Size:309K  onsemi
 fqb12p20.pdf pdf_icon

FQB12P20TM

MOSFET P-Channel, QFET) -200 V, -11.5 A, 470 mW FQB12P20 General Description These P-Channel enhancement mode power field effect transistors www.onsemi.com are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize VDSS RDS(ON) MAX ID MAX on-state resistance, provide superior switching perf

 8.1. Size:634K  fairchild semi
 fqb12p10tm.pdf pdf_icon

FQB12P20TM

TM QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailo

MOSTRAR MÁS

Otros transistores... FQB10N60CTM, FQB11N40CTM, FQB11N40TM, FQB11P06TM, FQB12N50TMAM002, FQB12N60CTM, FQB12N60TMAM002, FQB12P10TM, 2SK3568, FQB13N06LTM, FQB13N06TM, FQB13N10LTM, FQB13N10, FQB13N50CTM, FQB14N15, FQB14N30TM, FQB15P12TM