FQB12P20TM Todos los transistores

 

FQB12P20TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB12P20TM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 195 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm
   Paquete / Cubierta: D2-PAK
     - Selección de transistores por parámetros

 

FQB12P20TM Datasheet (PDF)

 ..1. Size:979K  fairchild semi
 fqb12p20tm.pdf pdf_icon

FQB12P20TM

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

 6.1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf pdf_icon

FQB12P20TM

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

 6.2. Size:309K  onsemi
 fqb12p20.pdf pdf_icon

FQB12P20TM

MOSFET P-Channel, QFET)-200 V, -11.5 A, 470 mWFQB12P20General DescriptionThese P-Channel enhancement mode power field effect transistorswww.onsemi.comare produced using ON Semiconductors proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeVDSS RDS(ON) MAX ID MAXon-state resistance, provide superior switching perf

 8.1. Size:634K  fairchild semi
 fqb12p10tm.pdf pdf_icon

FQB12P20TM

TMQFETFQB12P10 / FQI12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailo

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N7121 | AO8803 | FDC3612

 

 
Back to Top

 


 
.