FQB12P20TM Datasheet and Replacement. Cross Reference Search

FQB12P20TM Datasheet (PDF)

..1. Size:979K fairchild semi
fqb12p20tm.pdf pdf_icon

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

6.1. Size:1014K fairchild semi
fqb12p20 fqi12p20.pdf pdf_icon

6.2. Size:309K onsemi
fqb12p20.pdf pdf_icon

MOSFET P-Channel, QFET)-200 V, -11.5 A, 470 mWFQB12P20General DescriptionThese P-Channel enhancement mode power field effect transistorswww.onsemi.comare produced using ON Semiconductors proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeVDSS RDS(ON) MAX ID MAXon-state resistance, provide superior switching perf

8.1. Size:634K fairchild semi
fqb12p10tm.pdf pdf_icon

TMQFETFQB12P10 / FQI12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .