FQB13N06TM Todos los transistores

 

FQB13N06TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB13N06TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 13 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 5.8 nC
   Tiempo de subida (tr): 25 nS
   Conductancia de drenaje-sustrato (Cd): 90 pF
   Resistencia entre drenaje y fuente RDS(on): 0.135 Ohm
   Paquete / Cubierta: D2-PAK

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FQB13N06TM Datasheet (PDF)

 ..1. Size:673K  fairchild semi
fqb13n06tm fqi13n06tu.pdf

FQB13N06TM
FQB13N06TM

May 2001TMQFETFQB13N06 / FQI13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 6.1. Size:668K  fairchild semi
fqb13n06ltm fqi13n06ltu.pdf

FQB13N06TM
FQB13N06TM

May 2001TMQFETFQB13N06L / FQI13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

 8.1. Size:967K  fairchild semi
fqb13n50ctm fqb13n50c fqi13n50c fqi13n50ctu.pdf

FQB13N06TM
FQB13N06TM

October 2008QFETFQB13N50C/FQI13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially

 8.2. Size:566K  fairchild semi
fqb13n10ltm.pdf

FQB13N06TM
FQB13N06TM

December 2000TMQFETQFETQFETQFETFQB13N10L / FQI13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanc

 8.3. Size:635K  fairchild semi
fqb13n10.pdf

FQB13N06TM
FQB13N06TM

January 2001TMQFETQFETQFETQFETFQB13N10 / FQI13N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technol

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