FQB13N06TM Todos los transistores

 

FQB13N06TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB13N06TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: D2-PAK
     - Selección de transistores por parámetros

 

FQB13N06TM Datasheet (PDF)

 ..1. Size:673K  fairchild semi
 fqb13n06tm fqi13n06tu.pdf pdf_icon

FQB13N06TM

May 2001TMQFETFQB13N06 / FQI13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 6.1. Size:668K  fairchild semi
 fqb13n06ltm fqi13n06ltu.pdf pdf_icon

FQB13N06TM

May 2001TMQFETFQB13N06L / FQI13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

 8.1. Size:967K  fairchild semi
 fqb13n50ctm fqb13n50c fqi13n50c fqi13n50ctu.pdf pdf_icon

FQB13N06TM

October 2008QFETFQB13N50C/FQI13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially

 8.2. Size:566K  fairchild semi
 fqb13n10ltm.pdf pdf_icon

FQB13N06TM

December 2000TMQFETQFETQFETQFETFQB13N10L / FQI13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanc

MOSTRAR MÁS

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History: LSF70R640GT | MTN50N06E3 | IPI051N15N5 | CS4N65F | SM3116NAF | CPC3730 | SSFT4004

 

 
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