All MOSFET. FQB13N06TM Datasheet

 

FQB13N06TM Datasheet and Replacement


   Type Designator: FQB13N06TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: D2-PAK
 

 FQB13N06TM substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQB13N06TM Datasheet (PDF)

 ..1. Size:673K  fairchild semi
 fqb13n06tm fqi13n06tu.pdf pdf_icon

FQB13N06TM

May 2001TMQFETFQB13N06 / FQI13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 6.1. Size:668K  fairchild semi
 fqb13n06ltm fqi13n06ltu.pdf pdf_icon

FQB13N06TM

May 2001TMQFETFQB13N06L / FQI13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

 8.1. Size:967K  fairchild semi
 fqb13n50ctm fqb13n50c fqi13n50c fqi13n50ctu.pdf pdf_icon

FQB13N06TM

October 2008QFETFQB13N50C/FQI13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially

 8.2. Size:566K  fairchild semi
 fqb13n10ltm.pdf pdf_icon

FQB13N06TM

December 2000TMQFETQFETQFETQFETFQB13N10L / FQI13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanc

SHOW MORE

Datasheet: FQB11N40TM , FQB11P06TM , FQB12N50TMAM002 , FQB12N60CTM , FQB12N60TMAM002 , FQB12P10TM , FQB12P20TM , FQB13N06LTM , 13N50 , FQB13N10LTM , FQB13N10 , FQB13N50CTM , FQB14N15 , FQB14N30TM , FQB15P12TM , FQB16N15TM , FQB16N25CTM .

History: IRHY597130CM | UPA2735GR | IXFN32N120P | JCS6N90B | IRLR2905ZTR | IRF7484PBF | SPE65R360G

Keywords - FQB13N06TM MOSFET datasheet

 FQB13N06TM cross reference
 FQB13N06TM equivalent finder
 FQB13N06TM lookup
 FQB13N06TM substitution
 FQB13N06TM replacement

 

 
Back to Top

 


 
.