FQB27P06TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB27P06TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 185 nS

Cossⓘ - Capacitancia de salida: 510 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: D2-PAK

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FQB27P06TM datasheet

 ..1. Size:1071K  fairchild semi
 fqb27p06tm fqi27p06tu.pdf pdf_icon

FQB27P06TM

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especia

 6.1. Size:1119K  fairchild semi
 fqb27p06 fqi27p06.pdf pdf_icon

FQB27P06TM

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especia

 6.2. Size:985K  onsemi
 fqb27p06.pdf pdf_icon

FQB27P06TM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:814K  fairchild semi
 fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf pdf_icon

FQB27P06TM

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology

MOSTRAR MÁS

Otros transistores... FQB1N60TM, FQB1P50TM, FQB20N06LTM, FQB20N06TM, FQB22P10TM, FQB24N08TM, FQB25N33TM, FQB27N25TMAM002, EMB04N03H, FQB2N30TM, FQB2N50TM, FQB2N60TM, FQB2N80TM, FQB2N90TM, FQB2NA90TM, FQB2P25TM, FQB2P40TM