FQB27P06TM Specs and Replacement

Type Designator: FQB27P06TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 185 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: D2-PAK

FQB27P06TM substitution

- MOSFET ⓘ Cross-Reference Search

 

FQB27P06TM datasheet

 ..1. Size:1071K  fairchild semi
 fqb27p06tm fqi27p06tu.pdf pdf_icon

FQB27P06TM

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especia... See More ⇒

 6.1. Size:1119K  fairchild semi
 fqb27p06 fqi27p06.pdf pdf_icon

FQB27P06TM

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especia... See More ⇒

 6.2. Size:985K  onsemi
 fqb27p06.pdf pdf_icon

FQB27P06TM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:814K  fairchild semi
 fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf pdf_icon

FQB27P06TM

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology... See More ⇒

SHOW MORE

Detailed specifications: FQB1N60TM, FQB1P50TM, FQB20N06LTM, FQB20N06TM, FQB22P10TM, FQB24N08TM, FQB25N33TM, FQB27N25TMAM002, EMB04N03H, FQB2N30TM, FQB2N50TM, FQB2N60TM, FQB2N80TM, FQB2N90TM, FQB2NA90TM, FQB2P25TM, FQB2P40TM

Keywords - FQB27P06TM MOSFET specs

 FQB27P06TM cross reference

 FQB27P06TM equivalent finder

 FQB27P06TM pdf lookup

 FQB27P06TM substitution

 FQB27P06TM replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.