All MOSFET. FQB27P06TM Datasheet

 

FQB27P06TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB27P06TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 185 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: D2-PAK

 FQB27P06TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB27P06TM Datasheet (PDF)

 ..1. Size:1071K  fairchild semi
 fqb27p06tm fqi27p06tu.pdf

FQB27P06TM FQB27P06TM

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

 6.1. Size:1119K  fairchild semi
 fqb27p06 fqi27p06.pdf

FQB27P06TM FQB27P06TM

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

 6.2. Size:985K  onsemi
 fqb27p06.pdf

FQB27P06TM FQB27P06TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:814K  fairchild semi
 fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf

FQB27P06TM FQB27P06TM

May 2000TMQFETQFETQFETQFETFQB27N25 / FQI27N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology

 9.2. Size:494K  fairchild semi
 fqb27n25tm f085.pdf

FQB27P06TM FQB27P06TM

May 2014FQB27N25TM_F085/FQI27N25TU_F085 N-Channel MOSFETD250 V, 25.5 A, 131 m Features Typ RDS(on) = 108m at VGS = 10V, ID = 25.5A Typ Qg(tot) = 45nC at VGS = 10V, ID = 27AGS UIS CapabilityDTO-263AB RoHS Compliant TO-262AB Qualified to AEC Q101Applications Automotive Engine ControlG Powertrain Management Solenoid and Motor Drivers Electronic Ste

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQI7N80

 

 
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