FQB2N30TM Todos los transistores

 

FQB2N30TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB2N30TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 3.7 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
   Paquete / Cubierta: D2-PAK
 

 Búsqueda de reemplazo de FQB2N30TM MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQB2N30TM Datasheet (PDF)

 ..1. Size:741K  fairchild semi
 fqb2n30tm fqi2n30tu.pdf pdf_icon

FQB2N30TM

May 2000TMQFETQFETQFETQFETFQB2N30 / FQI2N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology h

 9.1. Size:579K  fairchild semi
 fqb2n60tm.pdf pdf_icon

FQB2N30TM

April 2000TMQFETQFETQFETQFETFQB2N60 / FQI2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 9.2. Size:720K  fairchild semi
 fqb2n50tm.pdf pdf_icon

FQB2N30TM

April 2000TMQFETQFETQFETQFETFQB2N50 / FQI2N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technolog

 9.3. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQB2N30TM

April 2000TMQFETQFETQFETQFETFQB2N90 / FQI2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technolo

MOSTRAR MÁS

Otros transistores... FQB1P50TM , FQB20N06LTM , FQB20N06TM , FQB22P10TM , FQB24N08TM , FQB25N33TM , FQB27N25TMAM002 , FQB27P06TM , MMD60R360PRH , FQB2N50TM , FQB2N60TM , FQB2N80TM , FQB2N90TM , FQB2NA90TM , FQB2P25TM , FQB2P40TM , FQB30N06LTM .

History: P0470ATF

 

 
Back to Top

 


 
.