FQB34N20LTM Todos los transistores

 ..1. Size:1016K  fairchild semi
 fqb34n20ltm.pdf

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been

 5.1. Size:1051K  fairchild semi
 fqb34n20l fqi34n20l.pdf

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been

 5.2. Size:952K  onsemi
 fqb34n20l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:1876K  fairchild semi
 fqb34n20 fqi34n20.pdf

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia

 6.2. Size:1043K  fairchild semi
 fqb34n20tm am002.pdf

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia

 6.3. Size:797K  onsemi
 fqb34n20.pdf

FQB34N20 N-Channel QFET MOSFET 200 V, 31 A, 75 m Features 31 A, 200 V, RDS(on) = 75 m (Max.) @ VGS = 10 V, Description ID = 15.5 A This N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 60 nC) is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced Low Crss (Typ. 55 pF) MOSFET technology has been especially t