FQB34N20LTM Specs and Replacement

Type Designator: FQB34N20LTM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 520 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: D2-PAK

FQB34N20LTM substitution

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FQB34N20LTM datasheet

 ..1. Size:1016K  fairchild semi
 fqb34n20ltm.pdf pdf_icon

FQB34N20LTM

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been ... See More ⇒

 5.1. Size:1051K  fairchild semi
 fqb34n20l fqi34n20l.pdf pdf_icon

FQB34N20LTM

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been ... See More ⇒

 5.2. Size:952K  onsemi
 fqb34n20l.pdf pdf_icon

FQB34N20LTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:1876K  fairchild semi
 fqb34n20 fqi34n20.pdf pdf_icon

FQB34N20LTM

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia... See More ⇒

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Detailed specifications: FQB2P25TM, FQB2P40TM, FQB30N06LTM, FQB30N06TM, FQB32N12V2TM, FQB32N20CTM, FQB33N10LTM, FQB33N10TM, IRF540, FQB34N20TMAM002, FQB34P10TM, FQB3N25TM, FQB3N30TM, FQB3N40TM, FQB3N60CTM, FQB3N90TM, FQB3P20TM

Keywords - FQB34N20LTM MOSFET specs

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