FQB3N60CTM Todos los transistores

 

FQB3N60CTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB3N60CTM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
   Paquete / Cubierta: D2-PAK
 

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FQB3N60CTM Datasheet (PDF)

 ..1. Size:872K  fairchild semi
 fqb3n60ctm.pdf pdf_icon

FQB3N60CTM

May 2006TMQFETFQB3N60C600V N-Channel MOSFETFeatures Description 3A, 600V, RDS(on) = 3.4 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 10.5 nC)stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially tailored to

 9.1. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf pdf_icon

FQB3N60CTM

November 2000TMQFETQFETQFETQFETFQB3N25 / FQI3N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.7 pF)This advanced technolo

 9.2. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf pdf_icon

FQB3N60CTM

April 2000TMQFETQFETQFETQFETFQB3N40 / FQI3N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technolog

 9.3. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf pdf_icon

FQB3N60CTM

September 2000TMQFETQFETQFETQFETFQB3N90 / FQI3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced techn

MOSTRAR MÁS

Otros transistores... FQB33N10LTM , FQB33N10TM , FQB34N20LTM , FQB34N20TMAM002 , FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM , IRFP260N , FQB3N90TM , FQB3P20TM , FQB3P50TM , FQB46N15TMAM002 , FQB47P06TMAM002 , FQB4N20LTM , FQB4N20TM , FQB4N25TM .

History: BUZ307 | RU40280R | NP48N055MLE | SSM9980GJ

 

 
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