FQB3N60CTM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQB3N60CTM
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10.5 nC
Время нарастания (tr): 30 ns
Выходная емкость (Cd): 45 pf
Сопротивление сток-исток открытого транзистора (Rds): 3.4 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB3N60CTM
FQB3N60CTM Datasheet (PDF)
fqb3n60ctm.pdf
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