FQB3N60CTM. Аналоги и основные параметры

Наименование производителя: FQB3N60CTM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 75 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 30 ns

Cossⓘ - Выходная емкость: 45 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FQB3N60CTM

- подборⓘ MOSFET транзистора по параметрам

 

FQB3N60CTM даташит

 ..1. Size:872K  fairchild semi
 fqb3n60ctm.pdf pdf_icon

FQB3N60CTM

May 2006 TM QFET FQB3N60C 600V N-Channel MOSFET Features Description 3A, 600V, RDS(on) = 3.4 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 10.5 nC) stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to

 9.1. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf pdf_icon

FQB3N60CTM

November 2000 TM QFET QFET QFET QFET FQB3N25 / FQI3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.7 pF) This advanced technolo

 9.2. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf pdf_icon

FQB3N60CTM

April 2000 TM QFET QFET QFET QFET FQB3N40 / FQI3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

 9.3. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf pdf_icon

FQB3N60CTM

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced techn

ПОКАЗАТЬ ЕЩЁ

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