FQB4N20LTM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB4N20LTM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 36 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm

Encapsulados: D2-PAK

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FQB4N20LTM datasheet

 ..1. Size:517K  fairchild semi
 fqb4n20ltm.pdf pdf_icon

FQB4N20LTM

December 2000 TM QFET QFET QFET QFET FQB4N20L / FQI4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced

 7.1. Size:704K  fairchild semi
 fqb4n20 fqi4n20.pdf pdf_icon

FQB4N20LTM

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology

 7.2. Size:698K  fairchild semi
 fqb4n20tm fqi4n20tu.pdf pdf_icon

FQB4N20LTM

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology

 8.1. Size:726K  fairchild semi
 fqb4n25tm fqi4n25tu.pdf pdf_icon

FQB4N20LTM

May 2000 TM QFET QFET QFET QFET FQB4N25 / FQI4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology

MOSTRAR MÁS

Otros transistores... FQB3N30TM, FQB3N40TM, FQB3N60CTM, FQB3N90TM, FQB3P20TM, FQB3P50TM, FQB46N15TMAM002, FQB47P06TMAM002, IRF3710, FQB4N20TM, FQB4N25TM, FQB4N50TM, FQB4N90TM, FQB4P25TM, FQB4P40TM, FQB50N06LTM, FQB50N06TM