Справочник MOSFET. FQB4N20LTM

 

FQB4N20LTM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQB4N20LTM
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 36 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.35 Ohm
   Тип корпуса: D2-PAK
 

 Аналог (замена) для FQB4N20LTM

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQB4N20LTM Datasheet (PDF)

 ..1. Size:517K  fairchild semi
 fqb4n20ltm.pdf pdf_icon

FQB4N20LTM

December 2000TMQFETQFETQFETQFETFQB4N20L / FQI4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

 7.1. Size:704K  fairchild semi
 fqb4n20 fqi4n20.pdf pdf_icon

FQB4N20LTM

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 7.2. Size:698K  fairchild semi
 fqb4n20tm fqi4n20tu.pdf pdf_icon

FQB4N20LTM

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 8.1. Size:726K  fairchild semi
 fqb4n25tm fqi4n25tu.pdf pdf_icon

FQB4N20LTM

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQB3N30TM , FQB3N40TM , FQB3N60CTM , FQB3N90TM , FQB3P20TM , FQB3P50TM , FQB46N15TMAM002 , FQB47P06TMAM002 , P55NF06 , FQB4N20TM , FQB4N25TM , FQB4N50TM , FQB4N90TM , FQB4P25TM , FQB4P40TM , FQB50N06LTM , FQB50N06TM .

History: CEP85N75 | 2SK2826 | CEB13N10 | SSM6P36FE | FTK2102 | HM60N03D

 

 
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