FQB6N90TMAM002 Todos los transistores

 

FQB6N90TMAM002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB6N90TMAM002
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
   Paquete / Cubierta: D2-PAK
 

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FQB6N90TMAM002 Datasheet (PDF)

 5.1. Size:596K  fairchild semi
 fqb6n90tm am002.pdf pdf_icon

FQB6N90TMAM002

December 2000TMQFETQFETQFETQFETFQB6N90 / FQI6N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology

 9.1. Size:729K  fairchild semi
 fqb6n40ctm fqi6n40ctu.pdf pdf_icon

FQB6N90TMAM002

TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.2. Size:756K  fairchild semi
 fqb6n40c.pdf pdf_icon

FQB6N90TMAM002

November 2013FQB6N40CN-Channel QFET MOSFET400 V, 6 A, 1.0 Description FeaturesThese N-Channel enhancement mode power field effect 6 A, 400 V, RDS(on) = 1.0 (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 3 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 16nC)technology has been especially tailored to min

 9.3. Size:759K  fairchild semi
 fqb6n15tm fqi6n15tu.pdf pdf_icon

FQB6N90TMAM002

May 2000TMQFETQFETQFETQFETFQB6N15 / FQI6N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 9.6 pF)This advanced technology h

MOSTRAR MÁS

Otros transistores... FQB6N15TM , FQB6N25TM , FQB6N40CTM , FQB6N50 , FQB6N60CTM , FQB6N60TM , FQB6N70TM , FQB6N80TM , IRFP450 , FQB70N10TMAM002 , FQB7N10LTM , FQB7N20LTM , FQB7N30TM , FQB7N60TM , FQB7N65CTM , FQB7N80TMAM002 , FQB7P06TM .

History: RU40130R | H6N70P | AFP8206

 

 
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