FQB6N90TMAM002 - описание и поиск аналогов

 5.1. Size:596K  fairchild semi
 fqb6n90tm am002.pdf 

December 2000 TM QFET QFET QFET QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology

 9.1. Size:729K  fairchild semi
 fqb6n40ctm fqi6n40ctu.pdf 

 9.2. Size:756K  fairchild semi
 fqb6n40c.pdf 

November 2013 FQB6N40C N-Channel QFET MOSFET 400 V, 6 A, 1.0 Description Features These N-Channel enhancement mode power field effect 6 A, 400 V, RDS(on) = 1.0 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 3 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 16nC) technology has been especially tailored to min

 9.3. Size:759K  fairchild semi
 fqb6n15tm fqi6n15tu.pdf 

May 2000 TM QFET QFET QFET QFET FQB6N15 / FQI6N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 9.6 pF) This advanced technology h

 9.4. Size:681K  fairchild semi
 fqb6n60ctm fqi6n60ctu.pdf 

QFET FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

 9.5. Size:842K  fairchild semi
 fqb6n60tm.pdf 

October 2008 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially

 9.6. Size:759K  fairchild semi
 fqb6n25tm.pdf 

May 2000 TM QFET QFET QFET QFET FQB6N25 / FQI6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 250V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology

 9.7. Size:1075K  fairchild semi
 fqb6n80 fqi6n80.pdf 

October 2008 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially

 9.8. Size:682K  fairchild semi
 fqb6n80tm.pdf 

September 2000 TM QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especi

 9.9. Size:797K  fairchild semi
 fqb6n70tm.pdf 

April 2000 TM QFET QFET QFET QFET FQB6N70 / FQI6N70 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.2A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technolog

 9.10. Size:721K  fairchild semi
 fqb6n50 fqi6n50tu.pdf 

April 2000 TM QFET QFET QFET QFET FQB6N50 / FQI6N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 500V, RDS(on) = 1.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology

 9.11. Size:892K  onsemi
 fqb6n40c.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur