FQB7N20LTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB7N20LTM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 63 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 6.8 nC
Tiempo de subida (tr): 125 nS
Conductancia de drenaje-sustrato (Cd): 55 pF
Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
Paquete / Cubierta: D2-PAK
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FQB7N20LTM Datasheet (PDF)
fqb7n20ltm.pdf
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December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced
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